王涛


的个人主页 http://teacher.nwpu.edu.cn/taowang

  被浏览次数:10191

基本信息 The basic information

王涛

材料学院

博士研究生毕业

博士

副教授

材料科学与工程

工作经历 Work Experience

2008.07~2010.05,博士后,西北工业大学;

2010.05~至今,副教授,西北工业大学

教育经历 Education Experience

2002年9月获得学士学位,西北工业大学,材料科学与工程

2008年7月获得博士学位,西北工业大学,材料学

教育教学 Education And Teaching

Fundamentals of Crystal Growth,研究生全英文课程

材料物理性能,本科生课程

荣誉获奖 Awards Information

2008年度陕西省科学技术二等奖,排名第三;

2012年度陕西省科学技术一等奖,排名第二;

2013年度国家技术发明二等奖,排名第二。

科学研究 Scientific Research

1、化合物半导体晶体生长与器件制备;

2、新型辐射探测材料设计与制备;

3、晶体生长新方法探索;

学术文献 Academic Literature

1. Study on the bias-dependent effects of proton-induced damage in CdZnTe radiation detectors using ion beam induced charge microscopy , 2016,88,54-9 ,DOI:10.1016/j.micron.2016.06.003, ISSN:1878-4291
2. Te inclusion-induced electrical field perturbation in CdZnTe single crystals revealed by Kelvin probe force microscopy , Elsevier Ltd,2016,88,48-53 ,DOI:10.1016/j.micron.2016.06.001, ISSN:1878-4291
3. Effects of Ga-Te interface layer on the potential barrier height of CdTe/GaAs heterointerface (vol 18, pg 2639, 2016) , ROYAL SOC CHEMISTRY,2016,18(7),5658-5658 ,DOI:10.1039/c6cp90030e, ISSN:1463-9076
4. Research on CdZnTe planar detector , Chinese Ceramic Society, Baiwanzhuang, Beijing, 100831, China,2009,38(3),620-624 ,DOI:, ISSN:1000985X
5. The hot cracking mechanism of 316L stainless steel cladding in rapid laser forming process , Northwest Institute for Nonferrous Metal Research, Xian, China,2003,32(3),183-186 ,DOI:, ISSN:1002185X
6. Charge transport performance of high resistivity CdZnTe crystals doped with In/Al , IOS Press, Nieuwe Hemweg 6B, Amsterdam, 1013 BG, Netherlands,2009,30(8),10-13 ,DOI:10.1088/1674-4926/30/8/082002, ISSN:1674-4926
7. 抛光液以及抛光Ⅱ-Ⅵ族化合物半导体晶片的方法 , 2007, ,DOI:, ISSN:
8. 制备大体积碲锌镉单晶的方法 , 2007, ,DOI:, ISSN:
9. 检测碲化物半导体晶体中富Te相的装置及方法 , 2011, ,DOI:, ISSN:
10. 在碲化镉、碲锌镉和碲锰镉上化学镀金铂合金电极的方法 , 2011, ,DOI:, ISSN:
11. 一种碲锌镉晶体的气相退火改性方法 , 2011, ,DOI:, ISSN:
12. 检测碲化物半导体晶体中富Te相的装置 , 2011, ,DOI:, ISSN:
13. 制备碲铟汞单晶专用石英坩埚 , 2010, ,DOI:, ISSN:
14. 垂直布里奇曼生长炉及炉内温度场优化方法 , 2008, ,DOI:, ISSN:
15. 高电阻率碲锌镉晶体的制备方法 , 2008, ,DOI:, ISSN:
16. 碲铟汞单晶的制备方法及其专用石英坩埚 , 2010, ,DOI:, ISSN:
17. 定向切割晶体任意晶面的简便方法 , 2010, ,DOI:, ISSN:
18. 碲锌镉像素探测器模块的封装方法 , 2014, ,DOI:, ISSN:
19. 条形阵列碲锌镉探测器的制备方法 , 2014, ,DOI:, ISSN:
20. 坩埚加速旋转技术对CdZnTe晶体Bridgman法生长过程影响的数值模拟研究 , 2015,,1 ,DOI:, ISSN:
21. 生长工艺参数对CdZnTe中Te夹杂相的影响 , 2015,,1 ,DOI:, ISSN:
22. 核辐射探测器用CdZnTe晶体的退火改性研究 , 2015,,2 ,DOI:, ISSN:
23. 抛光液以及抛光Ⅱ-Ⅵ族化合物半导体晶片的方法 , 2007, ,DOI:, ISSN:
24. 制备大体积碲锌镉单晶的方法 , 2007, ,DOI:, ISSN:
25. 检测碲化物半导体晶体中富Te相的装置及方法 , 2011, ,DOI:, ISSN:
26. 在碲化镉、碲锌镉和碲锰镉上化学镀金铂合金电极的方法 , 2011, ,DOI:, ISSN:
27. 一种碲锌镉晶体的气相退火改性方法 , 2011, ,DOI:, ISSN:
28. 检测碲化物半导体晶体中富Te相的装置 , 2011, ,DOI:, ISSN:
29. 制备碲铟汞单晶专用石英坩埚 , 2010, ,DOI:, ISSN:
30. 垂直布里奇曼生长炉及炉内温度场优化方法 , 2008, ,DOI:, ISSN:
31. 高电阻率碲锌镉晶体的制备方法 , 2008, ,DOI:, ISSN:
32. 碲铟汞单晶的制备方法及其专用石英坩埚 , 2010, ,DOI:, ISSN:
33. 定向切割晶体任意晶面的简便方法 , 2010, ,DOI:, ISSN:
34. 碲锌镉像素探测器模块的封装方法 , 2014, ,DOI:, ISSN:
35. 条形阵列碲锌镉探测器的制备方法 , 2014, ,DOI:, ISSN:
36. 二维碲化镓材料的制备方法 , 2015, ,DOI:, ISSN:
37. An Effective Approach to Improving Cadmium Telluride (111)A Surface by Molecular-Beam-Epitaxy Growth of Tellurium Monolayer , American Chemical Society,2016,8(1),726-735 ,DOI:10.1021/acsami.5b09863, ISSN:19448244
38. An Effective Approach to Improving Cadmium Telluride (111)A Surface by Molecular-Beam-Epitaxy Growth of Tellurium Monolayer , AMER CHEMICAL SOC,2016,8(1),726-735 ,DOI:10.1021/acsami.5609863, ISSN:1944-8244
39. Effects of Ga-Te interface layer on the potential barrier height of CdTe/GaAs heterointerface , ROYAL SOC CHEMISTRY,2016,18(4),2639-2645 ,DOI:10.1039/c5cp04802h, ISSN:1463-9076
40. Correction: Effects of Ga-Te interface layer on the potential barrier height of CdTe/GaAs heterointerface , 2016,18(7),5658 ,DOI:10.1039/c6cp90030e, ISSN:1463-9084
41. A Modified Diffusion Model for I-V Properties of Schottky Contacts to High Resistivity Semiconductors , IEEE,2013, ,DOI:10.1109/NSSMIC.2013.6829843, ISSN:
42. Influence of Isothermal Forging Temperature on Microstructure and Tensile Properties of Ti-5.8Al-4.0Sn-4.0Zr-0.7Nb-0.4Si-1.5Ta Near-alpha Titanium Alloy , TRANS TECH PUBLICATIONS LTD,2010,97-101,153-157 ,DOI:10.4028/www.scientific.net/AMR.97-101.153, ISSN:1022-6680
43. Effects of Annealing on Microstructure and Microhardness of TA15 Titanium Alloy Processed by Equal Channel Angular Pressing , TRANS TECH PUBLICATIONS LTD,2011,675-677,735-738 ,DOI:10.4028/www.scientific.net/MSF.675-677.735, ISSN:0255-5476
44. Correlation of dislocations and Te inclusions in detector-grade CdZnTe crystals grown by MVB method , SPIE-INT SOC OPTICAL ENGINEERING,2012,8507 ,DOI:10.1117/12.928176, ISSN:0277-786X
45. XAFS and XRD Studies of the Cd1-xZnxTe Crystal Fine Structure , IOP PUBLISHING LTD,2013,430(1) ,DOI:10.1088/1742-6596/430/1/012087, ISSN:1742-6588
46. 浅述钛基合金制备、成形和加工过程中的品粒细化方法 , 2011,(6),66-71 ,DOI:10.3969/j.issn.1671-833X.2011.06.011, ISSN:1671-833X
47. 高导热金属基复合材料的热物理性能 , 2004,35(z1),1668-1671 ,DOI:10.3321/j.issn:1001-9731.2004.z1.467, ISSN:1001-9731
48. 改进的垂直布里奇曼法生长CdZnTe晶体中的成分偏离现象 , 2007,28(z1),345-347 ,DOI:10.3321/j.issn:0253-4177.2007.z1.087, ISSN:0253-4177
49. CdZnTe晶体(111)面摇摆曲线不唯一现象研究 , 2007,28(z1),80-83 ,DOI:10.3321/j.issn:0253-4177.2007.z1.017, ISSN:0253-4177
50. Study on the behaviors of impurities in cadmium zinc telluride , ELSEVIER SCIENCE BV,2007,304(2),313-316 ,DOI:10.1016/j.jcrysgro.2007.03.013, ISSN:0022-0248
51. Observation of nano-scale Te precipitates in cadmium zinc telluride with HRTEM , ELSEVIER SCIENCE SA,2008,472(1-2),227-230 ,DOI:10.1016/j.msea.2007.03.038, ISSN:0921-5093
52. Effects of mosaic structure on the physical properties of CdZnTe crystals , ELSEVIER SCIENCE BV,2008,586(3),439-443 ,DOI:10.1016/j.nima.2007.12.033, ISSN:0168-9002
53. Temperature dependence of photoluminescence properties of In-doped cadmium zinc telluride , MATERIALS RESEARCH SOC,2008,23(5),1389-1392 ,DOI:10.1557/JMR.2008.0163, ISSN:0884-2914
54. Crystal growth and characterization of Cd0.8Mn0.2Te using Vertical Bridgman method , PERGAMON-ELSEVIER SCIENCE LTD,2008,43(5),1239-1245 ,DOI:10.1016/j.materresbull.2007.05.029, ISSN:0025-5408
55. Vertical Bridgman growth and characterization of CdMnTe substrates for HgCdTe epitaxy , ELSEVIER SCIENCE BV,2008,310(13),3203-3207 ,DOI:10.1016/j.jcrysgro.2008.03.024, ISSN:0022-0248
56. Evaluation of Mn uniformity in CdMnTe crystal grown by the vertical Bridgman method , SPRINGER,2008,37(8),1158-1162 ,DOI:10.1007/s11664-008-0473-9, ISSN:0361-5235
57. Nanostructures of defects in CdZnTe single crystals , ELSEVIER SCIENCE BV,2008,311(1),85-89 ,DOI:10.1016/j.jcrysgro.2008.09.190, ISSN:0022-0248
58. Study on temperature dependent resistivity of indium-doped cadmium zinc telluride , IOP PUBLISHING LTD,2009,42(3) ,DOI:10.1088/0022-3727/42/3/035105, ISSN:0022-3727
59. Thermal treatment of indium-doped Cd1-xZnxTe single crystals , ELSEVIER SCIENCE BV,2009,311(5),1268-1272 ,DOI:10.1016/j.jcrysgro.2009.01.093, ISSN:0022-0248
60. Type and formation mechanism of thermal etch pit on annealed (111) CdZnTe surface , ELSEVIER SCIENCE SA,2009,517(9),2896-2899 ,DOI:10.1016/j.tsf.2008.11.107, ISSN:0040-6090
61. The study on the work function of CdZnTe with different surface states by synchrotron radiation photoemission spectroscopy , AMER INST PHYSICS,2009,106(5) ,DOI:10.1063/1.3211325, ISSN:0021-8979
62. Transmission electron microscopy observations of twin boundaries and sub-boundary networks in bulk CdZnTe crystals , ELSEVIER SCIENCE BV,2009,311(19),4414-4417 ,DOI:10.1016/j.jcrysgro.2009.07.039, ISSN:0022-0248
63. Characterization of CdZnTe Crystals Grown Using a Seeded Modified Vertical Bridgman Method , IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC,2009,56(5),2808-2813 ,DOI:10.1109/TNS.2009.2026277, ISSN:0018-9499
64. Characterization of CdZnTe crystal grown by bottom-seeded Bridgman and Bridgman accelerated crucible rotation techniques , ELSEVIER SCIENCE BV,2009,19,S622-S625 ,DOI:, ISSN:1003-6326
65. Adsorption of water molecules on the CdZnTe (111) B surface , ELSEVIER SCIENCE BV,2010,489(1-3),103-106 ,DOI:10.1016/j.cplett.2010.02.013, ISSN:0009-2614
66. Investigation on defect levels in CdZnTe:Al using thermally stimulated current spectroscopy , IOP PUBLISHING LTD,2010,43(34) ,DOI:10.1088/0022-3727/43/34/345104, ISSN:0022-3727
67. Optical property analysis of CZT:In single crystals after annealing by a two-step method , ELSEVIER SCIENCE BV,2010,312(20),2876-2880 ,DOI:10.1016/j.jcrysgro.2010.07.014, ISSN:0022-0248
68. Interface Dipole and Schottky Barrier Formation at Au/CdZnTe(111)A Interfaces , AMER CHEMICAL SOC,2010,114(39),16426-16429 ,DOI:10.1021/jp1032756, ISSN:1932-7447
69. Influence of processing parameters on microstructure and tensile properties of TG6 titanium alloy , ELSEVIER SCIENCE SA,2010,528(2),736-744 ,DOI:10.1016/j.msea.2010.09.091, ISSN:0921-5093
70. Size and distribution of Te inclusions in detector-grade CdZnTe ingots , ELSEVIER SCIENCE INC,2011,21(1),66-72 ,DOI:, ISSN:1002-0071
71. Morphology evolution of micron-scale secondary phases in CdZnTe crystals grown by vertical Bridgman method , ELSEVIER SCIENCE SA,2011,509(5),2338-2342 ,DOI:10.1016/j.jallcom.2010.11.013, ISSN:0925-8388
72. Vertical Bridgman growth and characterization of CdMnTe crystals for gamma-ray radiation detector , ELSEVIER SCIENCE BV,2011,318(1),1062-1066 ,DOI:10.1016/j.jcrysgro.2010.11.086, ISSN:0022-0248
73. The effect of microstructure on tensile properties, deformation mechanisms and fracture models of TG6 high temperature titanium alloy , ELSEVIER SCIENCE SA,2011,528(6),2370-2379 ,DOI:10.1016/j.msea.2010.12.044, ISSN:0921-5093
74. Improvement of the quality of indium-doped CdZnTe single crystals by post-growth annealing for radiation detectors , ROYAL SOC CHEMISTRY,2011,13(10),3521-3525 ,DOI:10.1039/c0ce00958j, ISSN:1466-8033
75. Detector-grade CdZnTe:In crystals obtained by annealing , SPRINGER,2011,46(11),3749-3752 ,DOI:10.1007/s10853-011-5288-z, ISSN:0022-2461
76. Characterization of detector-grade CdZnTe:Al crystals obtained by annealing , ELSEVIER SCIENCE BV,2011,324(1),22-25 ,DOI:10.1016/j.jcrysgro.2011.03.036, ISSN:0022-0248
77. Effect of Te atmosphere annealing on the properties of CdZnTe single crystals , ELSEVIER SCIENCE BV,2011,643(1),53-56 ,DOI:10.1016/j.nima.2011.02.092, ISSN:0168-9002
78. Beta grain growth behaviour of TG6 and Ti17 titanium alloys , ELSEVIER SCIENCE SA,2011,528(21),6375-6380 ,DOI:10.1016/j.msea.2011.05.042, ISSN:0921-5093
79. Dependence of film texture on substrate and growth conditions for CdTe films deposited by close-spaced sublimation , A V S AMER INST PHYSICS,2011,29(5) ,DOI:10.1116/1.3610177, ISSN:0734-2101
80. The growth and the interfacial layer of CdZnTe nano-crystalline films by vacuum evaporation , PERGAMON-ELSEVIER SCIENCE LTD,2011,86(3),242-245 ,DOI:10.1016/j.vacuum.2011.06.013, ISSN:0042-207X
81. Investigation of Te inclusion induced glides and the corresponding dislocations in CdZnTe crystal , ROYAL SOC CHEMISTRY,2012,14(2),417-420 ,DOI:10.1039/c1ce05843f, ISSN:1466-8033
82. One-step fast deposition of thick epitaxial CdZnTe film on (001)GaAs by close-spaced sublimation , ROYAL SOC CHEMISTRY,2012,14(5),1790-1794 ,DOI:10.1039/c1ce06412f, ISSN:1466-8033
83. Effects of beta treatments on microstructures and mechanical properties of TC4-DT titanium alloy , ELSEVIER SCIENCE SA,2012,533,55-63 ,DOI:10.1016/j.msea.2011.11.033, ISSN:0921-5093
84. ZnCl2-assisted Synthesis of ZnSe Polycrystal , JOURNAL MATER SCI TECHNOL,2012,28(4),373-378 ,DOI:, ISSN:1005-0302
85. Matrix-controlled morphology evolution of Te inclusions in CdZnTe single crystal , PERGAMON-ELSEVIER SCIENCE LTD,2012,67(1),5-8 ,DOI:10.1016/j.scriptamat.2012.03.008, ISSN:1359-6462
86. Towards the cost effective epitaxy of hillocks free CdZnTe film on (001)GaAs by close-spaced sublimation , ELSEVIER SCIENCE BV,2012,78(,SI),39-41 ,DOI:10.1016/j.matlet.2012.03.050, ISSN:0167-577X
87. Growth-induced Stacking Faults of ZnO Nanorods Probed by Spatial Resolved Cathodoluminescence , IOP PUBLISHING LTD,2012,29(7) ,DOI:10.1088/0256-307X/29/7/077803, ISSN:0256-307X
88. Study of Te aggregation at the initial growth stage of CdZnTe films deposited by CSS , SPRINGER,2012,108(2),447-450 ,DOI:10.1007/s00339-012-6907-5, ISSN:0947-8396
89. The analysis of X-ray response of CdZnTe detectors , SCIENCE PRESS,2012,55(8),2295-2299 ,DOI:10.1007/s11431-012-4832-7, ISSN:1674-7321
90. Nitrate-Templated 1D EE-Azide-Cobalt Chain Exhibits Canted Antiferromagnetism and Slow Magnetic Relaxation , WILEY-V C H VERLAG GMBH,2012,(22),3537-3540 ,DOI:10.1002/ejic.201200445, ISSN:1434-1948
91. Solution growth of In-doped CdMnTe crystals by the vertical Bridgman method with the ACRT technique , ELSEVIER SCIENCE BV,2012,355(1),33-37 ,DOI:10.1016/j.jcrysgro.2012.06.041, ISSN:0022-0248
92. Growth interface of In-doped CdMnTe from Te solution with vertical Bridgman method under ACRT technique , ELSEVIER SCIENCE BV,2012,22,S143-S147 ,DOI:, ISSN:1003-6326
93. Radiation damage on CdZnTe:In crystals under high dose Co-60 gamma-rays , ROYAL SOC CHEMISTRY,2013,15(47),10304-10310 ,DOI:10.1039/c3ce41734d, ISSN:1466-8033
94. Study on twin boundaries and Te particles in CdMnTe crystals for nuclear detector application , ELSEVIER SCIENCE BV,2013,364,128-132 ,DOI:10.1016/j.jcrysgro.2012.11.030, ISSN:0022-0248
95. Electronic properties of aluminum/CdZnTe interfaces , AMER INST PHYSICS,2013,102(21) ,DOI:10.1063/1.4804365, ISSN:0003-6951
96. Hydrogen- and corrosion-induced defect characterization of ZnO single crystal: A slow positron beam study , WILEY-V C H VERLAG GMBH,2013,210(7),1418-1423 ,DOI:10.1002/pssa.201329009, ISSN:1862-6300
97. Interaction of hydrogen with defects in ZnO nanoparticles - studied by positron annihilation, Raman and photoluminescence spectroscopy , ROYAL SOC CHEMISTRY,2014,16(6),1207-1216 ,DOI:10.1039/c3ce42202j, ISSN:1466-8033
98. One pillared-layer alpha-Po framework with a rare tetracobalt-formate (4,4) sheet exhibiting a field-induced magnetic transition , ELSEVIER SCIENCE BV,2014,41,58-61 ,DOI:10.1016/j.inoche.2013.12.019, ISSN:1387-7003
99. Effects of sub-bandgap illumination on electrical properties and detector performances of CdZnTe:In , AMER INST PHYSICS,2014,104(23) ,DOI:10.1063/1.4883403, ISSN:0003-6951
100. Dislocation-mediated coupling mechanism between the microstructural defects and Te inclusions in CdZnTe single crystals , PERGAMON-ELSEVIER SCIENCE LTD,2014,82,17-20 ,DOI:10.1016/j.scriptamat.2014.03.007, ISSN:1359-6462
101. Migration of Te inclusions in CdZnTe single crystals under the temperature gradient annealing , ELSEVIER SCIENCE BV,2014,402,15-21 ,DOI:10.1016/j.jcrysgro.2014.04.004, ISSN:0022-0248
102. Electronic structure of the quantum spin Hall parent compound CdTe and related topological issues , AMER PHYSICAL SOC,2014,90(20) ,DOI:10.1103/PhysRevB.90.205211, ISSN:1098-0121
103. Effects of deep-level defects on carrier mobility in CdZnTe crystals , ELSEVIER SCIENCE BV,2014,767,318-321 ,DOI:10.1010/j.nima.2014.08.040, ISSN:0168-9002
104. The effect of structural vacancies on the twins in defect zinc-blende crystal Hg3In2Te6 grown by Bridgman method , ELSEVIER SCIENCE BV,2014,408,54-59 ,DOI:10.1016/j.jcrysgro.2014.09.014, ISSN:0022-0248
105. Axial distribution of deep-level defects in as-grown CdZnTe: In ingots and their effects on the material's electrical properties , ELSEVIER SCIENCE BV,2015,409,71-74 ,DOI:10.1016/j.jcrysgro.2014.09.039, ISSN:0022-0248
106. Influence of deep level defects on carrier lifetime in CdZnTe:In , AMER INST PHYSICS,2015,117(9) ,DOI:10.1063/1.4914159, ISSN:0021-8979
107. Effects of Crystal Growth Methods on Deep-Level Defects and Electrical Properties of CdZnTe:In Crystals , SPRINGER,2015,44(1),518-523 ,DOI:10.1007/s11664-014-3452-3, ISSN:0361-5235
108. Characterization of CdZnTe co-doped with indium and lead , ELSEVIER SCIENCE BV,2015,770,48-51 ,DOI:10.1016/j.nima.2014.10.010, ISSN:0168-9002
109. Space-Charge Manipulation Under Sub-bandgap Illumination in Detector-Grade CdZnTe , SPRINGER,2015,44(10),3229-3235 ,DOI:10.1007/s11664-015-3835-0, ISSN:0361-5235
110. 新型CZT半导体X射线和g射线探测器研制与应用展望 , 2013,(12),862-869 ,DOI:10.7693/wl20131205, ISSN:0379-4148
111. TG6合金等温变形条件下组织演变与性能的研究 , NORTHWEST INST NONFERROUS METAL RESEARCH,2010,39(10),1849-1852 ,DOI:, ISSN:1002-185X
112. 等温变形量对600℃TG6高温钛合金组织性能的影响 , NORTHWEST INST NONFERROUS METAL RESEARCH,2010,39(9),1540-1544 ,DOI:, ISSN:1002-185X
113. 室温辐射探测器用CdZnTe晶体生长及其器件制备 , 2010,29(4),546-550 ,DOI:, ISSN:1003-8728
114. CdZnTe探测器gamma射线响应及稳定性研究 , 2010,21(3),331-334 ,DOI:, ISSN:1005-0086
115. 退火对Al/CdZnTe肖特基接触特性的影响 , 2010,16(3),289-293 ,DOI:10.3969/j.issn.1007-4252.2010.03.018, ISSN:1007-4252
116. Ba (Ti0.8Zr0.2)O3-(Ba0.7Ca0.3)TiO3无铅陶瓷的显微结构和压电性能 , 2011,33(5),791-795,810 ,DOI:10.3969/j.issn.1004-2474.2011.05.030, ISSN:1004-2474
117. CdZnTe晶体中微米级富Te相与PL谱的对应关系 , SCIENCE CHINA PRESS,2011,26(04),359-363 ,DOI:10.3724/SP.J.1077.2011.00359, ISSN:1000-324X
118. 掺铟对碲锰镉晶体性能的影响 , NORTHWEST INST NONFERROUS METAL RESEARCH,2012,41(3),383-386 ,DOI:10.3969/j.issn.1002-185X.2012.03.002, ISSN:1002-185X
119. 热处理对β相区形变热处理TC21钛合金锻件组织性能的影响 , Chinese Journal of Aeronautics, 37 Xueyuan Road, Beijing, 100191, China,2012,32(1),1-5 ,DOI:10.3969/j.issn.1005-5053.2012.1.001, ISSN:1005-5053
120. 室温反应合成ZnSe粉体工艺研究 , 2012,26(2),10-13 ,DOI:10.3969/j.issn.1005-023X.2012.02.003, ISSN:1005-023X
121. CdZnTe半导体探测器X射线能谱响应特性分析 , 2012,42(8),874-878 ,DOI:, ISSN:1674-7259
122. 界面润湿性及固相体积分数对颗粒粗化动力学影响的相场法研究* , CHINESE PHYSICAL SOC,2013,62(10),324-332 ,DOI:10.7498/aps.62.106402, ISSN:1000-3290
123. 碲锌镉晶片中位错与Te沉淀的透射电子显微分析 , Science Press,2005,26(9),1760-1763 ,DOI:, ISSN:0253-4177
124. CdZnTe晶片的Raman光谱研究 , Chinese Ceramic Society, Baiwanzhuang, Beijing, 100831, China,2010,39(1),221-225,231 ,DOI:, ISSN:1000-985X
125. 碲锌镉晶体晶格畸变的测定与分析 , Chinese Ceramic Society, Beijing, China,2006,35(1),58-62 ,DOI:10.3969/j.issn.1000-985X.2006.01.013, ISSN:1000-985X
126. Nounique phenomenon of rocking curve on (111) surfaces of CdZnTe wafers , Science Press, 18,Shuangqing Street,Haidian, Beijing, 100085, China,2007,28(SUPPL.),80-83 ,DOI:, ISSN:02534177
127. CdZnTe晶体光致发光谱"负热淬灭"现象研究 , Chinese Ceramic Society, Baiwanzhuang, Beijing, 100831, China,2010,39(1),106-109 ,DOI:, ISSN:1000-985X
128. 大直径Hg3In2Te6晶体生长与性能表征 , Journal of Functional Materials, P.O. Box 1512, Chongqing, 630700, China,2010,41(4),578-580,586 ,DOI:, ISSN:1001-9731
129. 碲铟汞晶体的透射电子显微分析 , Chinese Ceramic Society, Baiwanzhuang, Beijing, 100831, China,2010,39(3),564-567 ,DOI:, ISSN:1000-985X
130. 热锻温度对TG6高温钛合金显微组织和力学性能的影响 , SCIENCE CHINA PRESS,2010,46(08),913-920 ,DOI:10.3724/SP.J.1037.2009.00851, ISSN:0412-1961
131. 碲铟汞(111)晶面腐蚀坑的研究 , Journal of Functional Materials, P.O. Box 1512, Chongqing, 630700, China,2010,41(10),1853-1856 ,DOI:, ISSN:1001-9731
132. 室温固相反应合成碱式碳酸锌 , Journal of Functional Materials, P.O. Box 1512, Chongqing, 630700, China,2012,43(4),537-540 ,DOI:, ISSN:1001-9731
133. 温度对CdZnTe载流子输运特性和能谱特性的影响 , Board of Optronics Lasers, No. 47 Yang-Liu-Qing Ying-Jian Road, Tian-Jin City, 300380, China,2012,23(3),506-511 ,DOI:, ISSN:1005-0086
134. Effects of indium doping on the properties of Cd1-xMnxTe crystals , Rare Metals Materials and Engineering Press, P.O. Box 51, Xi'an, 721014, China,2012,41(3),383-386 ,DOI:, ISSN:1002185X
135. 控制降温对近空间升华法沉积CdZnTe薄膜形貌与结构的影响 , Journal of Functional Materials, P.O. Box 1512, Chongqing, 630700, China,2012,43(6),725-728 ,DOI:10.3969/j.issn.1001-9731.2012.06.013, ISSN:1001-9731
136. Te溶剂-Bridgman法Cd0.9Mn0.1Te晶体生长习性研究 , Chinese Ceramic Society, Baiwanzhuang, Beijing, 100831, China,2012,41(2),306-311 ,DOI:, ISSN:1000-985X
137. 非催化剂法制备ZnO纳米线阵列的近带边高分辨变温光致发光性能研究 , Journal of Functional Materials, P.O. Box 1512, Chongqing, 630700, China,2013,44(8),1077-1080 ,DOI:10.3969/j.issn.1001-9731.2013.08.004, ISSN:1001-9731
138. 移动加热器法生长CZT晶体的成分及缺陷均匀性研究 , Chinese Ceramic Society, Baiwanzhuang, Beijing, 100831, China,2013,42(11),2215-2219,2229 ,DOI:, ISSN:1000-985X
139. 等通道转角挤压(ECAP)工艺对Ti-1023合金显微硬度的影响 , Chinese Journal of Aeronautics, 37 Xueyuan Road, Beijing, 100083, China,2009,29(2),25-28 ,DOI:10.3969/j.issn.1005-5053.2009.02.005, ISSN:1005-5053
140. Cd0.9 Zn0.1 Te晶体的A1掺杂研究 , Journal of Functional Materials, P.O. Box 1512, Chongqing, 630700, China,2009,40(4),529-531,534 ,DOI:10.3321/j.issn:1001-9731.2009.04.001, ISSN:1001-9731
141. CdZnTe平面探测器对低能X/gamma射线的光谱响应 , Chinese Optical Society, P.O. Box 80, Xi'an, 710068, China,2009,29(11),3072-3077 ,DOI:10.3788/AOS20092911.3072, ISSN:0253-2239
142. Ar和H_2气氛退火CdZnTe表面的XPS研究 , Chinese Ceramic Society,2014,43(10),2487-2491 ,DOI:, ISSN:1000-985X
143. 采用低温PL 谱研究探测器级CdZnTe 晶体 , Chinese Ceramic Society,2014,43(2),321 ,DOI:, ISSN:1000-985X
144. 退火处理对CdZnTe晶体光电性能的影响 , Chinese Ceramic Society,2014,43(2),269-274 ,DOI:, ISSN:1000-985X
145. 富Te条件下CdTe晶体中的点缺陷研究 , Chinese Ceramic Society,2014,43(8),1885-1890 ,DOI:, ISSN:1000-985X
146. 二维层状GaTe的晶体结构研究 , Chinese Ceramic Society,2014,43(12),3059-3062 ,DOI:, ISSN:1000-985X
147. 籽晶垂直布里奇曼法生长大尺寸CdZnTe单晶体 , Chinese Ceramic Society, Beijing, China,2006,35(6),1180-1184 ,DOI:10.3969/j.issn.1000-985X.2006.06.005, ISSN:1000-985X
148. Study on the composition deviations in CZT crystal grown by MVB method , Science Press, 18,Shuangqing Street,Haidian, Beijing, 100085, China,2007,28(SUPPL.),345-347 ,DOI:, ISSN:02534177
149. 探测器级CdZnTe晶体变温特性研究 , Journal of Functional Materials, P.O. Box 1512, Chongqing, 630700, China,2011,42(3),441-443,447 ,DOI:, ISSN:1001-9731
150. 不同温度下碲铟汞晶体结构的XRD研究 , Chinese Ceramic Society, Baiwanzhuang, Beijing, 100831, China,2011,40(2),314-317 ,DOI:, ISSN:1000-985X
151. 室温核辐射CdZnTe像素探测器的研制 , Board of Optronics Lasers, No. 47 Yang-Liu-Qing Ying-Jian Road, Tian-Jin City, 300380, China,2011,22(5),660-665 ,DOI:, ISSN:1005-0086
152. 碲溶剂法生长的Zn1-xCrxTe稀磁半导体晶锭中富碲相的研究 , Chinese Ceramic Society, Baiwanzhuang, Beijing, 100831, China,2011,40(5),1102-1106 ,DOI:, ISSN:1000-985X
153. N_2H_4·H_2O水热体系ZnO微晶的结晶特性 , Journal of Functional Materials, P.O. Box 1512, Chongqing, 630700, China,2011,42(11),2092-2095 ,DOI:, ISSN:1001-9731
154. Cr2+:ZnSe中红外激光晶体生长及光谱性能 , Chinese Ceramic Society, Baiwanzhuang, Beijing, 100831, China,2011,40(6),1382-1386 ,DOI:, ISSN:1000-985X
155. Concentration of extended defects in CdZnTe single crystals: Effects of cooling rate after growth , ELSEVIER SCIENCE BV,2012,355(1),84-87 ,DOI:10.1016/j.jcrysgro.2012.06.024, ISSN:0022-0248
156. Comparison of the x-ray spectroscopy response and charge transport properties of semi-insulating In/Al doped CdZnTe crystals , AMER INST PHYSICS,2009,105(8) ,DOI:10.1063/1.3097301, ISSN:0021-8979
157. Photoluminescence analysis on the indium doped Cd0.9Zn0.1Te crystal , AMER INST PHYSICS,2006,100(1) ,DOI:10.1063/1.2213155, ISSN:0021-8979
158. Electrical properties and electrical field in depletion layer for CZT crystals , ALLERTON PRESS INC,2006,16(,1),S75-S78 ,DOI:10.1016/S1003-6326(06)60146-5, ISSN:1003-6326
159. Effects of two-step annealing on properties of Cd1-xZnxTe single crystals , ALLERTON PRESS INC,2006,16(,1),S174-S177 ,DOI:10.1016/S1003-6326(06)60169-6, ISSN:1003-6326
160. Effects of In doping on the properties of CdZnTe single crystals , ELSEVIER SCIENCE BV,2005,283(3-4),431-437 ,DOI:10.1016/j.jcrysgro.2005.06.035, ISSN:0022-0248
161. Impurities in CdZnTe crystal grown by vertical Bridgman method , ELSEVIER SCIENCE BV,2004,534(3),511-517 ,DOI:10.1016/j.nima.2004.06.135, ISSN:0168-9002
162. Behaviors of impurities in Cd0.85Zn0.15Te crystals grown by vertical Bridgman method , ELSEVIER SCIENCE SA,2004,113(1),7-12 ,DOI:10.1016/j.mseb.2004.05.006, ISSN:0921-5107
163. Growth of In doped CdZnTe by vertical Bridgman method and the effect of In on the crystal properties , ELSEVIER SCIENCE BV,2004,265(1-2),159-164 ,DOI:10.1016/j.jcrysgro.2003.12.079, ISSN:0022-0248
164. Characteristics of doped indium in Cd0.9Zn0.1Te grown by the Bridgman method , IOP PUBLISHING LTD,2004,19(3),457-460 ,DOI:10.1088/0268-1242/19/3/029, ISSN:0268-1242
165. CdZnTe energy levels induced by doping of indium , CHINESE PHYSICAL SOC,2004,21(2),367-369 ,DOI:, ISSN:0256-307X
166. 316L不锈钢激光快速成形过程中熔覆层的热裂机理 , NORTHWEST INST NONFERROUS METAL RESEARCH,2003,32(3),183-186 ,DOI:10.3321/j.issn:1002-185X.2003.03.007, ISSN:1002-185X
167. 西北工业大学凝固技术国家重点实验室介万奇教授研究团队 , 2014,(6),383-384 ,DOI:, ISSN:1674-3962
168. 氧化锌单晶电化学充氢及腐蚀导致的微结构和缺陷研究 , 2012,(中国四川成都),90-901 ,DOI:, ISSN:
169. 应用慢正电子束研究氧氩比和H离子注入对ZnO薄膜微结构的影响 , 2009,(中国广西南宁),1 ,DOI:, ISSN:
170. CdZnTe探测器γ射线响应及稳定性研究 , Board of Optronics Lasers, No. 47 Yang-Liu-Qing Ying-Jian Road, Tian-Jin City, 300380, China,2010,21(03),331-334 ,DOI:, ISSN:1005-0086
171. 检测碲化物半导体探测器内建电场的装置 , 2014, ,DOI:, ISSN:
172. 一种检测碲化物半导体探测器内建电场的装置及方法 , 2014, ,DOI:, ISSN:
173. ACRT-Te溶液Bridgman法生长的In掺杂CdMnTe界面研究(英文) , 2012,(S1),143-147 ,DOI:, ISSN:1003-6326
174. 条形阵列碲锌镉探测器的制备方法 , 2013, ,DOI:, ISSN:
175. 碲锌镉像素探测器模块的封装方法 , 2013, ,DOI:, ISSN:
176. 一种碲锌镉晶体的气相退火改性方法 , 2011, ,DOI:, ISSN:
177. 检测碲化物半导体晶体中富Te相的装置 , 2010, ,DOI:, ISSN:
178. 检测碲化物半导体晶体中富Te相的装置及方法 , 2010, ,DOI:, ISSN:
179. 在碲化镉、碲锌镉和碲锰镉上化学镀金铂合金电极的方法 , 2010, ,DOI:, ISSN:
180. 定向切割晶体任意晶面的简便方法 , 2009, ,DOI:, ISSN:
181. 制备碲铟汞单晶专用石英坩埚 , 2009, ,DOI:, ISSN:
182. 碲铟汞单晶的制备方法及其专用石英坩埚 , 2009, ,DOI:, ISSN:
183. 高电阻率碲锌镉晶体的制备方法 , 2007, ,DOI:, ISSN:
184. 垂直布里奇曼生长炉及炉内温度场优化方法 , 2007, ,DOI:, ISSN:
185. 制备大体积碲锌镉单晶的方法 , 2007, ,DOI:, ISSN:
186. 抛光液以及抛光Ⅱ-Ⅵ族化合物半导体晶片的方法 , 2006, ,DOI:, ISSN:
187. Hydrogen-induced defects of subsurface layer in ZnO single crystal probed by a slow positron beam , Trans Tech Publications Ltd, Kreuzstrasse 10, Zurich-Durnten, CH-8635, Switzerland,2013,733,232-235 ,DOI:10.4028/www.scientific.net/MSF.733.232, ISSN:9783037855188
188. Extended defects in as-grown CdZnTe , SPIE, P.O. Box 10, Bellingham, WA 98227-0010, United States,2010,7805 ,DOI:10.1117/12.860731, ISSN:9780819483010
189. 二维碲化镓材料的制备方法 , 2014, ,DOI:, ISSN:
190. 超声处理对AZ91合金微观组织的影响 , ELSEVIER SCIENCE BV,2014,24(1),76-81 ,DOI:10.1016/S1003-6326(14)63030-2, ISSN:1003-6326
191. Temperature Effects of ECAP and Annealing after ECAP on Microstructure of TA15 Alloy , TRANS TECH PUBLICATIONS LTD,2010,97-101,332-336 ,DOI:10.4028/www.scientific.net/AMR.97-101.332, ISSN:1022-6680
192. Study on the temperature dependent properties of detector-grade CdZnTe crystals , Journal of Functional Materials, P.O. Box 1512, Chongqing, 630700, China,2011,42(3),441-443+447 ,DOI:, ISSN:10019731
193. Low-cost C/SiC composites prepared by CVI+pressure-PIP hybrid process , Science Press,2006,21(3),664-670 ,DOI:, ISSN:1000324X
194. 简述钛合金的塑性变形晶粒细化方法 , 2009,,534-537 ,DOI:, ISSN:
195. Growth and spectral properties of Cr2+:ZnSe crystals for mid-infrared lasers , Chinese Ceramic Society, Baiwanzhuang, Beijing, 100831, China,2011,40(6),1382-1386 ,DOI:, ISSN:1000985X
196. 气相生长ZnSe:Cr~(2+)晶体及其性能研究 , 2012,(中国安徽合肥),1 ,DOI:, ISSN:
197. ZnO microcrystal growth in hydrothermal processing with N2H4?H2O , Journal of Functional Materials, P.O. Box 1512, Chongqing, 630700, China,2011,42(11),2092-2095 ,DOI:, ISSN:10019731
198. Fabrication of room-temperature nuclear-radiation CdZnTe pixel array detectors , Board of Optronics Lasers, No. 47 Yang-Liu-Qing Ying-Jian Road, Tian-Jin City, 300380, China,2011,22(5),660-665 ,DOI:, ISSN:10050086
199. Study on the C/SiC composites for hot gas valve of solid propellant ramjet , Journal of Solid Rocket Technology,2006,29(2),135-138 ,DOI:, ISSN:10062793
200. Study on the composition deviations in CZT crystal grown by MVB method , Science Press, 18,Shuangqing Street,Haidian, Beijing, 100085, China,2007,28(SUPPL.),345-347 ,DOI:, ISSN:02534177
201. XRD study of MIT crystal structure at different temperatures , Chinese Ceramic Society, Baiwanzhuang, Beijing, 100831, China,2011,40(2),314-317 ,DOI:, ISSN:1000985X
202. Cd0.9Zn0.1Te晶体中的In掺杂研究 , 2007,,230-232 ,DOI:, ISSN:
203. 气相生长ZnSe:Cr2+晶体及其性能研究 , 2012,,1-1 ,DOI:, ISSN:
204. Te在CZT晶体中的不均匀分布及其对探测器能谱响应的影响 , 2012,(中国安徽合肥),1-1 ,DOI:, ISSN:
205. Study on Raman spectrum of CdZnTe wafer , Chinese Ceramic Society, Baiwanzhuang, Beijing, 100831, China,2010,39(1),221-225+231 ,DOI:, ISSN:1000985X
206. 高导热金属基复合材料的热物理性能 , 2004,(中国北京·秦皇岛),1668-1671 ,DOI:, ISSN:
207. ACRT-Te溶液Bridgman法生长的In掺杂CdMnTe界面研究 , 2012,,438-442 ,DOI:, ISSN:
208. CdZnTe半导体探测器X射线能谱响应特性分析 , 2011,,369-377 ,DOI:, ISSN:
209. The electrical properties and defect levels of Al doped CdZnTe crystal for detector applications , SPIE, P.O. Box 10, Bellingham WA, WA 98227-0010, United States,2009,7385,73850U ,DOI:10.1117/12.835264, ISSN:9780819476661
210. Non-destructive characterization and selection of X/??-ray detector-grade CdZnTe crystals , SPIE, P.O. Box 10, Bellingham WA, WA 98227-0010, United States,2009,7385,73850T ,DOI:10.1117/12.834947, ISSN:9780819476661
211. Effect of de-trapping on carrier transport process in semi-insulating CdZnTe , IOP PUBLISHING LTD,2015,24(6) ,DOI:10.1088/1674-1056/24/6/067203, ISSN:1674-1056
212. Study of etch pits on (111) surface of Hg3In2Te6 crystal , Journal of Functional Materials, P.O. Box 1512, Chongqing, 630700, China,2010,41(10),1853-1856 ,DOI:, ISSN:10019731
213. Bulk crystal growth and characterization of Hg3In2Te6 , Journal of Functional Materials, P.O. Box 1512, Chongqing, 630700, China,2010,41(4),578-580+586 ,DOI:, ISSN:10019731
214. Study on negative thermal quenching of PL in CdZnTe crystal , Chinese Ceramic Society, Baiwanzhuang, Beijing, 100831, China,2010,39(1),106-109 ,DOI:, ISSN:1000985X
215. Effects of hot forging temperature on microstructure and mechanical property of TG6 high temperature titanium alloy , Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110015, China,2010,46(8),913-920 ,DOI:10.3724/SP.J.1037.2010.00851, ISSN:04121961
216. TEM analysis on Hg3In2Te6 crystal , Chinese Ceramic Society, Baiwanzhuang, Beijing, 100831, China,2010,39(3),564-567 ,DOI:, ISSN:1000985X
217. Nounique phenomenon of rocking curve on (111) surfaces of CdZnTe wafers , Science Press, 18,Shuangqing Street,Haidian, Beijing, 100085, China,2007,28(SUPPL.),80-83 ,DOI:, ISSN:02534177
218. Measurement and analysis of lattice distortion of CdZnTe single crystal , Chinese Ceramic Society, Beijing, China,2006,35(1),58-62 ,DOI:, ISSN:1000985X
219. Influence of isothermal forging temperature on microstructure and mechanical properties of Ti-6Al-2Sn-2Zr-3Mo-1Cr-2Nb-Si titanium alloy , Science Press, 18,Shuangqing Street,Haidian, Beijing, 100085, China,2012,1,252-255 ,DOI:, ISSN:9787030338990
220. Effect of deformation temperature on microstructures and mechanical properties of TC4-DT titanium alloy , Science Press, 18,Shuangqing Street,Haidian, Beijing, 100085, China,2012,2,932-936 ,DOI:, ISSN:9787030338952
221. TEM study on defects in epitaxial CdZnTe films deposited on (001)GaAs by close-spaced sublimation , Materials Research Society, 506 Keystone Drive, Warrendale, PA 15086, United States,2012,1432,85-90 ,DOI:10.1557/opl.2012.1027, ISSN:9781605114095
222. Study on composition and defects uniformity of CdZnTe crystal grown by travelling heater method , Chinese Ceramic Society, Baiwanzhuang, Beijing, 100831, China,2013,42(11),2215-2219+2229 ,DOI:, ISSN:1000985X
223. Defects in CdMnTe crystals for nuclear detector applications , Institute of Physics Publishing, Temple Circus, Temple Way, Bristol, BS1 6BE, United Kingdom,2013,34(4) ,DOI:10.1088/1674-4926/34/4/043003, ISSN:16744926
224. 热处理对TG6合金热模锻件组织不均匀性的影响 , 2010,,593-597 ,DOI:, ISSN:
225. 钛及钛合金等通道转角挤压变形工艺研究现状 , 2010,,1016-1020 ,DOI:, ISSN:
226. Effects of annealing on the optical and electrical properties of CdZnTe crystals , Chinese Ceramic Society,2014,43(2),269-274 ,DOI:, ISSN:1000985X
227. A study on the low energy X/??-ray spectral response of CdZnTe planar detectors , Chinese Optical Society, P.O. Box 80, Xi''an, 710068, China,2009,29(11),3072-3077 ,DOI:10.3788/AOS20092911.3072, ISSN:02532239
228. Study on Cd0.9Mn0.1Te growth behavior by Te solvent-Bridgman method , Chinese Ceramic Society, Baiwanzhuang, Beijing, 100831, China,2012,41(2),306-311 ,DOI:, ISSN:1000985X
229. Effects of cooling method on the morphology and structure of CdZnTe film deposited by close-spaced sublimation , Journal of Functional Materials, P.O. Box 1512, Chongqing, 630700, China,2012,43(6),725-728 ,DOI:, ISSN:10019731
230. Effects of indium doping on the properties of Cd1-xMnxTe crystals , Rare Metals Materials and Engineering Press, P.O. Box 51, Xi''an, 721014, China,2012,41(3),383-386 ,DOI:, ISSN:1002185X
231. Effect of temperature on the carrier transportation and spectral properties of CdZnTe , Board of Optronics Lasers, No. 47 Yang-Liu-Qing Ying-Jian Road, Tian-Jin City, 300380, China,2012,23(3),506-511 ,DOI:, ISSN:10050086
232. Synthesis of basic zinc carbonate by solid-state reaction at room temperature , Journal of Functional Materials, P.O. Box 1512, Chongqing, 630700, China,2012,43(4),537-540 ,DOI:, ISSN:10019731
233. Effect of equal channel angle pressing (ECAP) technology on microhardness of Ti-1023 alloy , Chinese Journal of Aeronautics, 37 Xueyuan Road, Beijing, 100083, China,2009,29(2),25-28 ,DOI:, ISSN:10055053
234. Research on CdZnTe planar detector , Chinese Ceramic Society, Baiwanzhuang, Beijing, 100831, China,2009,38(3),620-624 ,DOI:, ISSN:1000985X
235. Effect of duplex annealing on microstructure and properties of TC18 titanium alloy isothermally forged , Editorial Office of Transactions of Materials, 18 Xueqing Road, Beijing, 100083, China,2009,30(1),100-103 ,DOI:, ISSN:10096264
236. C/SiC composites prepared by inner siliconizing process , Beijing Institute of Aeronautical Materials (BIAM), Beijing, China,2005,(9),41-44+52 ,DOI:, ISSN:10014381
237. Temperature dependent near-band-edge photoluminescence of catalyst-free ZnO thin nanowires epitaxially grown on a-plane sapphire , Journal of Functional Materials, P.O. Box 1512, Chongqing, 630700, China,2013,44(8),1077-1080 ,DOI:, ISSN:10019731
238. Study on the point defects in Te-riched CdTe crystals , Chinese Ceramic Society,2014,43(8),1885-1890 ,DOI:, ISSN:1000985X
239. Study on detector grade CdZnTe crystal by low temperature photoluminescence spectrum , Chinese Ceramic Society,2014,43(2),321-326+332 ,DOI:, ISSN:1000985X
240. XPS analysis on the surface of CdZnTe Annealed in Ar and H2 atmosphere , Chinese Ceramic Society,2014,43(10),2487-2491 ,DOI:, ISSN:1000985X
241. 高导热金属基复合材料的热物理性能 , 2004,,1668-1671 ,DOI:, ISSN:
242. CdZnTe晶体缺陷的透射电子显微分析 , 2007,,3967-3969 ,DOI:, ISSN:
243. 氧化锌单晶电化学充氢及腐蚀导致的微结构和缺陷研究 , 2012,,90-901 ,DOI:, ISSN:
244. CVD/CVI制备C/SiC基复合材料的反应机理研究 , 2010,,1-1 ,DOI:, ISSN:
245. The Effect of Isothermal Forging Parameters on the Microstructure and Properties of Ti-5Al-5Mo-5V-1Cr-1Fe Titanium Alloy , TRANS TECH PUBLICATIONS LTD,2010,97-101,301-305 ,DOI:10.4028/www.scientific.net/AMR.97-101.301, ISSN:1022-6680
246. Study on Te-rich phase in Zn1-xCrxTe diluted magnetic semiconductor ingot grown by Te-solvent method , Chinese Ceramic Society, Baiwanzhuang, Beijing, 100831, China,2011,40(5),1102-1106 ,DOI:, ISSN:1000985X
247. Spectroscopic studies of CdTe(111) bulk and surface electronic structure , AMER PHYSICAL SOC,2015,91(23) ,DOI:10.1103/PhysRevB.91.235303, ISSN:1098-0121
248. In掺杂对CdMnTe晶体性能的影响 , 2007,,1030-1033 ,DOI:, ISSN:
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